equivalent circuit features 1. built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. the bias resistors consist of thin -film resistors with complete isolation to allow positive biasing of the input.they also have the advantage of completely eliminating parasitic effects. 3. only the on/off conditions need to be set for operation, making device design easy. pin connenctions and marking addreviated symbol: 93 sot-523 addreviated symbol: 93 sot-23-3l sot-23 sot-323 to-92s dta143te dta143tua dta114eca DTA143TCA dta143tka dta143tsa addreviated symbol: 93 addreviated symbol: 93 sot- 7 23 dta114eca dta143t m addreviated symbol: 93 digital transistor (pnp) almost 1 date:2011/05 www.htsemi.com semiconductor jinyu dta143 tm/dta143 te/dta143 tua dta143 tka/dta143 tsa/dta143 tca
electrical characteristics (ta=25 ) typical characteristics parameter symbol min. typ max. unit conditions collector-base breakdown voltage v (br)cbo -50 v ic=-50a collector-emitter breakdown voltage v (br)ceo -50 v ic=-1ma emitter-base breakdown voltage v (br)ebo -5 v i e =-50a collector cut-off current i cbo -0.5 a v cb =-50v emitter cut-off current i ebo -0.5 a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.3 v i c =-5ma,i b =-0.25ma dc current transfer ratio h fe 100 600 v ce =-5v,i c =-1ma input resistance r 1 3.29 4.7 6.11 k ? transition frequency f t 250 mhz v ce =-10v ,i e =5ma,f=100mhz absolute maximum ratings(ta=25 ) parameter symbol limits (dt a 143 t ) unit m e ua ca ka sa collector-base voltage v (br)cbo - 50 v collector-emitter voltage v (br)ceo - 50 v emitter-base voltage v (br)ebo - 5 v collector current i c - 100 ma collector power dissipation p c 100 150 200 300 mw junction temperature tj 150 storage temperature tstg -55~150 2 date:2011/05 www.htsemi.com semiconductor jinyu dta143 tm/dta143 te/dta143 tua dta143 tka/dta143 tsa/dta143 tca
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